类石墨烯二硫化钨薄膜的化学气相沉积法制备及其应用

尤运城; 曾甜; 刘劲松; 胡廷松; 台国安

doi:10.7536/PC150433

化学进展 ›› 2015, Vol. 27 ›› Issue (11) :1578-1590 DOI: 10.7536/PC150433

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类石墨烯二硫化钨薄膜的化学气相沉积法制备及其应用

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Chemical Vapor Deposition and Application of Graphene-Like Tungsten Disulfide

You Yuncheng^1,2, Zeng Tian^1,2, Liu Jinsong², Hu Tingsong², Tai Guoan^1*

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摘要

类石墨烯过渡金属硫属化合物如MoS₂、WS₂、MoSe₂、WSe₂等因为具有层数依赖的带隙结构而受到了广泛关注。尤其是本征态的WS₂为双极性半导体,它同时具有n型和p型电输运特性,有望在电子电路、存储器件、光电探测和光伏器件方面得以广泛应用。近年来,化学气相沉积技术已经被广泛用于制备大面积二维硫属化合物(如MoS₂, MoSe₂, WS₂ 和WSe₂)原子层薄膜。目前关于其他二维材料体系的综述文献介绍较多,但是针对WS₂介绍的综述文献还鲜有报道。因此,本文综述了类石墨烯WS₂薄膜的化学气相沉积法制备和相关器件的国内外研究进展,讨论了WS₂薄膜的化学气相沉积法制备机理及生长因素如硫粉含量、载气的成分、反应温度、基底材料等对薄膜成膜质量的影响,介绍了WS₂薄膜在晶体管、光电器件及与其他二维材料构成的异质结构器件的最新研究成果,并对可能存在的问题进行了分析和述评。

Abstract

Graphene-like transition metal chalcogenide compounds such as MoS₂, WS₂, MoSe₂, WSe₂ have attracted wide interests because of their unique layer number-dependent bandgap. In particularly, intrinsic WS₂ is a bipolar semiconductor with n-type and p-type electronic transport properties, it is expected to be widely used in electrical circuit, memory, photodetector and photovoltaic devices. Recently, chemical vapor deposition(CVD) technique, in contrast to traditional chemical or physical exfoliation options, is extensively used to prepare large-area two-dimensional transition metal chalcogenide(such as MoS₂, MoSe₂, WS₂ and WSe₂) atomic layers. Although a few review papers about other two-dimensional materials have been published, the detailed introduction for graphene-like WS₂ has been rarely reported. In this review, we summarize the research progress on chemical vapor deposition and related devices of graphene-like WS₂. First, we introduce two growth methods of preparing WS₂ thin films via chemical vapor deposition techniques: two-step growth route and one-step growth route, and then discuss the growth mechanism of the two methods and essential parameters that influence the growth of the WS₂ thin films such as sulfur content, carrier gas composition, reaction temperature and substrate materials. Then, we introduce the research progress of WS₂-based transistors, photoelectric devices and related heterostructures. Finally, we analyze and review possible problems in developing WS₂-related devices.

Contents
1 Introduction
2 Physical Properties of tungsten disulfide thin films
3 Preparation of WS₂ thin films via chemical vapor deposition technique
3.1 Classification of chemical vapor deposition technique
3.2 Mechanism of preparing WS₂ thin films
4 Application of WS₂ thin films in electrical devices
4.1 Field effect transistor
4.2 Photoelectric device
4.3 Heterostructural device
5 Conclusion and outlook

Graphical abstract

关键词

WS₂薄膜 / 化学气相沉积法 / 晶体管 / 异质结构 / 光电器件

Key words

WS₂ thin film / chemical vapor deposition / transistor / heterostructure / photoelectric device

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尤运城, 曾甜, 刘劲松, 胡廷松, 台国安. 类石墨烯二硫化钨薄膜的化学气相沉积法制备及其应用[J]. 化学进展, 2015, 27(11): 1578-1590 DOI:10.7536/PC150433

You Yuncheng, Zeng Tian, Liu Jinsong, Hu Tingsong, Tai Guoan. Chemical Vapor Deposition and Application of Graphene-Like Tungsten Disulfide[J]. Progress in Chemistry, 2015, 27(11): 1578-1590 DOI:10.7536/PC150433

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