基于石墨烯及其衍生物的信息存储:材料、器件和性能

孙赛, 庄小东, 汪露馨, 汪诚, 张斌, 陈彧

doi:10.7536/PC150501

化学进展 ›› 2016, Vol. 28 ›› Issue (1) :18-39 DOI: 10.7536/PC150501

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基于石墨烯及其衍生物的信息存储:材料、器件和性能

孙赛, 庄小东, 汪露馨, 汪诚, 张斌, 陈彧

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Graphene-Based Functional Materials for Information Storage: Materials, Devices and Performance

Sun Sai, Zhuang Xiaodong, Wang Luxin, Wang Cheng, Zhang Bin, Chen Yu

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摘要

石墨烯以其独特的二维结构和高的热导电性、高杨氏模量、高电子/空穴迁移率、高抗拉强度、大的布鲁诺尔-埃米特-特勒表面积和量子霍尔效应等优异性能,备受科研工作者的关注,迅速成为材料、化学、物理和工程领域的热点研究课题。与富勒烯(C₆₀、C₇₀)的功能化一样,利用共价键合修饰或非共价键合修饰的方法可以在石墨烯表面或石墨烯体系中引入功能基团或功能组分,制备出种类繁多的具有特殊光、电、磁和生物效应的石墨烯衍生物。以石墨烯作为数据存储介质的分子级别计算已经引发了一场信息技术产业的革命,它能在更小的空间上,使用更少的能源来存储更多的数据信息, 有望成为目前基于硅半导体存储技术的潜在替代或补充技术。基于石墨烯的存储器件展现出优良的数据存储性能、器件稳定性和可靠性,为使这类器件具有更好的实际应用前景,人们采用许多技术手段来调控和优化器件性能。本文综述了近年来引起广泛关注的诸如石墨烯、共价修饰的石墨烯、石墨烯基复合材料、石墨烯/无机材料异质结等基于石墨烯及其衍生物的存储器件及相关材料研究进展,以及石墨烯/还原的氧化石墨烯透明电极在存储器件中的应用。探讨了该领域存在的亟待解决的关键基础问题和未来发展方向。

Abstract

Two-dimensional graphene has been at the center of a significant research effort due to its high thermal conductivity, high Young's modulus, charge/hole mobility, fracture strength, specific Brunauer-Emmett-Teller surface area, and the quantum Hall effect. Similar to the functionalization of fullerenes, by using covalent or non-covalent modification methods, some organic functional groups, small molecules and polymers have been covalently grafted to the graphene surface or non-covalently doped into the graphene system to form a larger number of graphene derivatives designed for optoelectronics, photonics and biologies. Molecular computation using graphene as the data storage medium has ignited the revolution in information technology industries, making it possible to store more data in less space and with less energy. The data storage performance, stability and reliability of the graphene memories have advanced significantly towards practical information storage applications. A number of essential strategies can be employed to control and optimize the switching characteristics of graphene memories. In this comprehensive review, recent research progress on the graphene-based functional materials, including graphene, graphene oxide(GO), reduced graphene oxide (RGO), chemically modified GO/RGO, graphene/GO/RGO-based composites, and others, as active materials for information storage, has been systematically summarized and discussed. The key problems that need to be solved urgently in the materials design and device fabrication and the future development of this area have also been pointed out.

Contents
1 Introduction
2 Graphene-based information storage devices
2.1 Intrinsic graphene prepared by chemical vapor deposition (CVD)
2.2 Intrinsic graphene prepared by mechanical exfoliation
2.3 Graphene nanoribbons
2.4 Graphene oxide (GO)
2.5 Reduced graphene oxide (RGO)
2.6 Nitrogen-doped RGO (N-RGO)
3 Covalent modified GO/RGO-based information storage devices
3.1 Conjugated polymer-functionalized GO/RGO
3.2 Non-conjugated polymer-functionalized GO/RGO
3.3 Small molecule-functionalized GO/RGO
3.4 Metal nanoparticle-functionalized GO/RGO
4 Graphene/GO/RGO composites-based information storage devices
4.1 Polymer-graphene/GO/RGO composites
4.2 Small molecule-graphene/GO/RGO composites
4.3 Polymer-graphene quantum dot composites
5 Graphene(GO, RGO)/inorganics heterojunction-based information storage devices
5.1 Graphene/inorganics
5.2 GO(RGO)/inorganics
6 Graphene and RGO-based electrodes for information storage
6.1 Graphene electrodes
6.2 RGO electrodes
7 Summary and outlook

Graphical abstract

关键词

石墨烯 / 信息存储 / 阻变存储 / 电双稳态 / 透明电极

Key words

graphene / information storage / resistive memory / electrical bistability / transparent electrode

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孙赛, 庄小东, 汪露馨, 汪诚, 张斌, 陈彧. 基于石墨烯及其衍生物的信息存储:材料、器件和性能[J]. 化学进展, 2016, 28(1): 18-39 DOI:10.7536/PC150501

Sun Sai, Zhuang Xiaodong, Wang Luxin, Wang Cheng, Zhang Bin, Chen Yu. Graphene-Based Functional Materials for Information Storage: Materials, Devices and Performance[J]. Progress in Chemistry, 2016, 28(1): 18-39 DOI:10.7536/PC150501

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