二维硫化钼基原子晶体材料的化学气相沉积法制备及其器件

曾甜; 尤运城; 王旭峰; 胡廷松; 台国安

doi:10.7536/PC151027

化学进展 ›› 2016, Vol. 28 ›› Issue (4) :459-470 DOI: 10.7536/PC151027

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二维硫化钼基原子晶体材料的化学气相沉积法制备及其器件

^1,2

^1,2*

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Chemical Vapor Deposition and Device Application of Two-Dimensional Molybdenum Disulfide-Based Atomic Crystals

Zeng Tian^1,2, You Yuncheng^1,2, Wang Xufeng^1,2, Hu Tingsong², Tai Guoan^1,2*

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摘要

二维过渡族金属硫属化合物因其带隙具有强烈的层数依赖性而在电子器件方面具有广泛的应用前景.其中单层二硫化钼(MoS₂)是该系列材料中最典型的一种直接带隙半导体,它具有优异的光、电、磁、热和力学性能.二维MoS₂有望在光电探测、光伏器件、场效应晶体管、存储器件、谷电子和自旋器件、温差电器件、微纳机电器件和系统等方面得以广泛应用.化学气相沉积(CVD)法已成为制备二维过渡族金属硫属化合物如MoS₂、MoSe₂、WS₂和WSe₂等原子层薄膜的主要手段,尤其科学界利用CVD法对二维MoS₂材料进行了深入的制备探索,通过该方法制备的MoS₂薄膜在电子和光电器件方面已经有广泛研究.本文将从二维MoS₂的基本物性出发,详细介绍CVD法制备MoS₂的各种工艺过程,如热分解硫代硫酸盐法、硫化Mo(MoO_3-x)薄膜制备法、MoO_3-x粉体与硫属前驱体气相合成法和钼箔表面直接硫化法,并介绍了基于MoS₂的二维异质结构筑方法.在制备材料的基础上,详细阐述了二维MoS₂在场效应晶体管、光电探测器、柔性电子器件以及异质结器件方面的应用,并展望了二维材料在半导体器件中的应用前景.

Abstract

Transition metal dichalcogenides (TMDCs) materials has a great potential for applications in electronics and optoelectronics devices owing to its tuning band gap strongly depending on the thickness. Among the TMDCs materials, monolayer MoS₂, as a direct band gap semiconductor, has fascinating optical, electrical, magnetic, thermal and mechanical properties. 2D MoS₂ is expected to be widely used in photodetectors, photovoltic devices, field effect transistors, memory devices, valley electronics, spintronics, thermoelectrics, micro-nanoelectromechanical devices and systems. At present, chemical vapor deposition (CVD) is the most promising method to synthesize large-area two-dimensional transition metal chalcogenide (such as MoS₂, MoSe₂, WS₂ and WSe₂) atomic layers. Electronic and optoelectronic devices of CVD-made 2D MoS₂ have been extensively investigated. In this review, we summarize extensive chemical vapor deposition methods such as thermal decomposition of (NH₄)₂MoS₄, sulfurization of metal Mo or MoO_3-x thin film, gas-phase synthesis of sulfur-based precursors and direct sulfurization of molybdenum foils. Then, the preparation of different 2D heterostructures has also been introduced. On the basis of preparing the 2D materials, we introduce in detail the research progress of MoS₂-based transistors, photoelectric devices, flexible devices and related heterostructures. Finally, we analyze the research of two-dimensional materials with further applications in semiconductor devices.

Contents
1 Introduction
2 Basic character of 2D molybdenum disulfide
2.1 Crystal structure and band structure
2.2 Optical properties
3 Synthesis of 2D molybdenum disulfide via chemical vapor deposition
3.1 Thermal decomposition of (NH₄)₂MoS₄
3.2 Sulfurization of metal Mo or MoO_3-_x thin films
3.3 Gas-phase synthesis of sulfur-based precursors
3.4 Direct sulfurization of molybdenum foils
3.5 Synthesis of 2D layered heterostructures
4 Application of 2D molybdenum disulfide in electric devices
4.1 Field effect transistors based on 2D MoS₂
4.2 Photodetectors based on 2D MoS₂
4.3 Flexible electronic devices
4.4 2D layered heterostructures devices
5 Conclusion

Graphical abstract

关键词

二硫化钼 / 化学气相沉积 / 光电器件 / 二维异质结

Key words

molybdenum disulfide / chemical vapor deposition / optoelectronic devices / 2D heterostructures

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曾甜, 尤运城, 王旭峰, 胡廷松, 台国安. 二维硫化钼基原子晶体材料的化学气相沉积法制备及其器件[J]. 化学进展, 2016, 28(4): 459-470 DOI:10.7536/PC151027

Zeng Tian, You Yuncheng, Wang Xufeng, Hu Tingsong, Tai Guoan. Chemical Vapor Deposition and Device Application of Two-Dimensional Molybdenum Disulfide-Based Atomic Crystals[J]. Progress in Chemistry, 2016, 28(4): 459-470 DOI:10.7536/PC151027

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