中文   |   English   |   Email Alert

二维原子晶体材料的制备与应变传感特性研究

朱文杰1, 台国安1,2*, 王旭峰1,2, 古其林1,2, 伍增辉1,2, 朱孔军1,2*

化学进展 ›› 2017, Vol. 29 ›› Issue (11) :1285-1296

PDF (15668KB)
化学进展 ›› 2017, Vol. 29 ›› Issue (11) :1285-1296 DOI: 10.7536/PC170567
综述
扫码查看或转发全文

二维原子晶体材料的制备与应变传感特性研究

    朱文杰1, 台国安1,2*, 王旭峰1,2, 古其林1,2, 伍增辉1,2, 朱孔军1,2*
作者信息 +

Fabrication and Strain Sensing Properties of Two-Dimensional Atomic Crystal Materials

  • Wenjie Zhu1, Guoan Tai1,2*, Xufeng Wang1,2, Qilin Gu1,2, Zenghui Wu1,2, Kongjun Zhu1,2*
Author information +
文章历史 +

摘要

二维原子晶体材料由于具有优异的光、电、力、磁和热学等性能而引起了广泛的研究兴趣。尤其,二维原子晶体材料在微小形变下可以产生较大的电阻变化,且能够承受比相应体材料更大的弹性应变而不至于使其结构破坏,在应变传感器方面具有重要的潜在应用价值,并且有望构建在各种条件下适用的柔性集成化的电子器件。目前,二维原子晶体材料备受关注的是石墨烯、二硫化钼和黑磷。本文从上述三种典型二维材料的基本物性出发,基于其物理性质和微观结构从理论上解释二维材料的应变传感特性,并详细介绍二维材料的各种制备方法如机械剥离法、溶液法和化学气相沉积法(CVD)等。在材料制备的基础上,阐述了石墨烯、二硫化钼、黑磷在应变传感领域如健康监测、可穿戴器件、电子皮肤等方面的具体应用,并展望了二维材料未来的研究方向与应用前景。

Abstract

Two-dimensional atomic crystal materials have attracted a wide range of research interests due to their excellent optical, electrical, mechanical, magnetic and thermal properties. In particular, two-dimensional atomic crystal materials can produce a large resistance change steadily under the micro-deformation. They can bear a greater elastic strain than the corresponding bulk material without causing breaking of the structures. The characteristic makes them have an important potential application for the high-performance strain sensors. Besides, they are expected to fabricate flexible integrated electronic devices which are appropriate for all kinds of working condition. At present, the studies related to two-dimensional atomic crystal materials have mainly concentrated on graphene, molybdenum disulfide and black phosphorus. In this review, we firstly introduce the basic properties of the three typical two-dimensional materials and explain theoretically their strain sensing characteristics based on their physical property and microstructure. Secondly, some important methods for preparing the 2D materials, such as micromechanical exfoliation, solution exfoliation and chemical vapor deposition (CVD), are summarized. Thirdly, the applications of the 2D materials in the strain sensing fields, such as health monitoring, wearable devices and electronic skin, are introduced in detailed. Finally, we present the future research direction and application prospect of two-dimensional materials.
Contents
1 Introduction
2 Basic physical properties of 2D materials
2.1 Graphene
2.2 MoS2
2.3 Phosphorene
2.4 Theory explanation for strain sensing
3 Synthesis of 2D materials
3.1 Mechanical exfoliation methods
3.2 Solution methods
3.3 Chemical vapor deposition
4 Application in strain sensing
4.1 Graphene
4.2 MoS2
4.3 Phosphorene
5 Conclusion

Graphical abstract

关键词

二维材料 / 弹性应变 / 化学气相沉积法 / 应变传感 / 健康监测

Key words

two-dimensional materials / elastic strain / chemical vapor deposition / strain sensing / health monitoring

引用本文

引用格式 ▾
朱文杰, 台国安, 王旭峰, 古其林, 伍增辉, 朱孔军. 二维原子晶体材料的制备与应变传感特性研究[J]. 化学进展, 2017, 29(11): 1285-1296 DOI:10.7536/PC170567
Wenjie Zhu, Guoan Tai, Xufeng Wang, Qilin Gu, Zenghui Wu, Kongjun Zhu. Fabrication and Strain Sensing Properties of Two-Dimensional Atomic Crystal Materials[J]. Progress in Chemistry, 2017, 29(11): 1285-1296 DOI:10.7536/PC170567

登录浏览全文

4963

注册一个新账户 忘记密码

参考文献

[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A. Science, 2004, 306:666.
[2] Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K. Proc. Natl. Acad. Sci. U.S.A., 2005, 102:10451.
[3] Wu M, Zeng X. Nano Lett., 2016, 16:3236.
[4] Zhao S J, Kang W, Xue J M. Appl. Phys. Lett., 2014, 104:13.
[5] Tai G, Hu T, Zhou Y, Wang X, Kong J, Zeng T, You Y, Wang Q. Angew. Chem. Int. Ed., 2015, 54:15473.
[6] Feng B J, Zhang J, Zhong Q, Li W B, Li S, Li H, Cheng P, Chen S M L, Wu K H. Nat.Chem., 2016, 8:564.
[7] Mannix A J, Zhou X F, Kiraly B, Wood J D, Alducin D, Myers B D, Liu X L, Brandon L F, Santiago U, Jeffrey R, Yacaman M J, Ponce A, Oganov A R, Mark C, Guisinger N P. Science, 2015, 350:1513.
[8] Schwierz F. Nat. Nano, 2010, 5:487.
[9] Sundaram R S, Navarro C G, Balasubramaniam K, Burghard M, Kern K. Adv. Mater., 2008, 20:3050.
[10] Li X H, Choy W C H, Huo L J, Xie F X, Sha W E I, Ding B F, Guo X, Li Y F, Hou J H, You J B, Yang Y. Adv. Mater., 2012, 24:3046.
[11] Michael E, Mathias S, Phaedon A. Nano Lett., 2014, 14:6414.
[12] Koenig S P, Doganov R A, Schmidt H, Neto A H C, Ozyilmaz B. Appl. Phys. Lett., 2014, 104:103106.
[13] Mayorga-Martinez C C, Sofer Z, Pumera M. Angew. Chem. Int. Ed., 2015, 54:14317.
[14] Dai J, Zeng X C. J. Phys. Chem. Lett., 2014, 5:1289.
[15] Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A. Nat. Nanotechnol., 2013, 8:497.
[16] Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A. Nat. Nanotechnol., 2011, 6:147.
[17] Pu J, Yomogida Y, Liu K K, Li L J, Iwasa Y, Takenobu T. Nano Lett., 2012, 12:4013.
[18] Gao M R, Xu Y F, Jiang J, Yu S H. Chem. Soc. Rev., 2013, 42:2986.
[19] Park M, Park Y, Chen X, Park Y K, Kim M S, Ahn J H. Adv. Mater., 2016, 28:2556.
[20] Shi G, Zhao Z H, Pai J H, Lee I, Zhang L Q, Stevenson C, Ishara K, Zhang R J, Zhu H W, Ma J. Adv. Funct. Mater., 2016, 2:619.
[21] Wang Y, Wang L, Yang T, Li X, Zang X, Zhu M, Wang K, Wu D, Zhu H. Adv. Funct. Mater., 2014, 24:4666.
[22] Casiraghi C, Hartschuh A, Lidorikis E, Qian H, Harutyunyan H, Gokus T, Novoselov K S, Ferrari A C. Nano Lett., 2007, 7:2711.
[23] Katsnelson M. Mater. Today, 2007, 10:20.
[24] Balandin A, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau C N. Nano Lett., 2008, 8:902.
[25] Chae H, Siberio-Pérez D, Kim J, Go Y B, Eddaoudi M, Matzger A, O'Keeffe M, Yaghi1 O M. Nature, 2004, 427:523.
[26] Liu Y, Xiao N, Gong N, Wang H, Shi X, Gu W, Ye L. Carbon, 2014, 68:258.
[27] Lee C, Wei X, Kysar J, Hone J. Science, 2008, 321:385.
[28] Xu M S, Liang T, Shi M M, Chen H Z. Chem. Rev., 2013, 113:3766.
[29] Mak K F, Lee C, Hone J, Shan J, Heinz T F. Phys. Rev. Lett., 2010, 105:136805.
[30] Splendiani A, Sun L, Zhang Y B, Li T S, Kim J, Chim C Y, Galli, G, Wang F. Nano Lett., 2010, 10:1271.
[31] Hui Y Y, Liu X, Jie W, Chan N Y, Hao J, Hsu Y T, Li L J, Guo W, Lau S P. ACS Nano, 2013, 7:7126.
[32] Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y. Nat. Nanotechnol., 2014, 9:372.
[33] Asahina H, Shindo K, Morita A. J. Phys. Soc. Jpn., 1982, 51:1193.
[34] Qiao J, Kong X, Hu Z X, Yang F, Ji W. Nat. Commun., 2014, 5:4475.
[35] Li L, Kim J, Jin C, Ye G, Qiu D Y, da Jornada F H, Shi Z, Chen L, Zhang Z, Yang F, Watanabe K, Taniguchi T, Ren W, Louie S G, Chen X, Zhang Y, Wang F. Nat. Nanotechnol., 2016, 12:21.
[36] Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tománek D, Ye P D. ACS Nano, 2014, 8:4033.
[37] Guo X F, Qiu J P, Guo W L. Nanotechnology, 2016, 27:505702.
[38] Pan D X, Li Y, Wang T C, Guo W L. Acta Mech. Sin., 2017,33:71.
[39] Liu X F, Pan D X, Hong Y Z, Guo W L. Am. Phys. Soc., 2014, 112:205502.
[40] Geim A K, Novoselov K S. Nat. Mater., 2007, 6:183.
[41] Xie L M, Jiao L Y, Dai H J. J. Am. Chem. Soc., 2010, 132:14751.
[42] Yin Z Y, Li H. ACS Nano, 2011, 6:74.
[43] Li H, Yin Z Y, He Q Y, Li H, Huang X, Lu G, Fam D W H, Tok A I Y, Zhang Q, Zhang H. Small, 2012, 8:63.
[44] Jeong H K, Lee Y P, Lahaye R J W E, Park M H, An K H, Kim I J, Yang C W, Park C Y, Ruoff R S, Lee Y H. J. Am. Chem. Soc., 2008, 130:1362.
[45] Zhang L, Liang J J, Huang Y, Ma Y F, Wang Y, Chen Y S. Carbon, 2009, 47:3365.
[46] Becerril H A, Mao J, Liu Z, Stoltenberg R M, Randall M, Bao Z, Chen Y. ACS Nano, 2008, 2:463.
[47] Chang H X, Sun Z H, Yuan Q H, Ding F, Tao X M, Yan F, Zheng Z J. Adv. Mater., 2010, 22:4872.
[48] Li D, Muller M B, Gilje S, Kaner R B, Wallace G G. Nat. Nanotechnol., 2008, 3:101.
[49] Zeng Z Y, Yin Z Y, Huang X, Li H, He Q Y, Lu G, Boey F, Zhang H. Angew. Chem. Int. Edit., 2011, 50:11093.
[50] Gopalakrishnan D, Damien D, Shaijumon M M. ACS Nano, 2014, 8:5297.
[51] Sun Z B, Xie H H, Tang S Y, Yu X F, Guo Z N, Shao J D, Zhang H, Huang H, Wang H Y, Chu P K. Angew. Chem. Int. Ed., 2015, 54:11526.
[52] Obraztsov A N, Obraztsova E A, Tyurnina A V. Carbon, 2007, 45:2017.
[53] Yu Q, Lian J, Siriponglert S. Appl. Phys. Lett., 2008, 93:113103.
[54] Li X S, Cai W W, Colombo L G, Ruoff R S. Nano Lett., 2009, 9:4268.
[55] Bae S, Kim H, Lee Y, Xu X F, Park J, Zheng Y, Balakrishnan J, Lei T, Kim H R, Song Y, Kim Y, Kim K S, Özyilmaz B, Ahn J, Hong B H, Iijima S.Nat. Nanotechnol., 2010, 5:574.
[56] Ling X, Lee Y H, Lin Y X, Fang W J, Yu L L, Dresselhaus M S, Kong J. Nano lett., 2014, 14:464.
[57] Wang X S, Feng H B, Wu Y M, Jiao L Y. J. Am. Chem. Soc., 2013, 135:5304.
[58] Tai G, Zeng T, Yu J, Zhou J, You Y, Wang X, Wu H, Sun X, Hu T, Guo W. Nanoscale, 2016, 8:2234.
[59] Wang Y, Yang R, Shi Z W, Zhang L Z, Shi D X, Wang E G, Zhang G Y. ACS Nano, 2011, 5:3645.
[60] Li X, Sun P, Fan L, Zhu M, Wang K, Zhong M, Wei J, Wu D, Cheng Y, Zhu H. Sci. Rep., 2012, 2:395.
[61] Yang T, Wang W, Zhang H, Li X, Shi J, He Y, Zheng Q, Li Z, Zhu H. ACS Nano, 2015, 9:10867.
[62] Fei R, Yang L. Nano Lett., 2014, 14:2884.
[63] Wu H R, Liu X F, Yin J, Zhou J X, Guo W L. Small, 2016, 12:5276.
PDF (15668KB)

3039

访问

0

被引

详细

导航
相关文章

/

〈 〉