二硫化钼薄膜的刻蚀方法及其应用

奚清扬; 刘劲松; 李子全; 朱孔军; 台国安; 宋若谷

doi:10.7536/PC170925

化学进展 ›› 2018, Vol. 30 ›› Issue (6) :847-863 DOI: 10.7536/PC170925

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二硫化钼薄膜的刻蚀方法及其应用

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Etching Methods and Application of Molybdenum Disulfide Film

Qingyang Xi¹, Jinsong Liu^1,2*, Ziquan Li^1,3, Kongjun Zhu², Guoan Tai^2*, Ruogu Song¹

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摘要

过渡金属硫化物因能带结构与层数具有明显的依赖关系而受到广泛关注，尤其是二维二硫化钼（MoS₂）薄膜因其优良的光电性能而成为研究热点。目前，化学气相沉积法（CVD）和剥离法已成为制备MoS₂薄膜的主要方法，但这两种方法均存在难以精确控制MoS₂层数的问题，研究证实通过刻蚀手段能够对MoS₂薄膜层数进行进一步加工，从而得到单层或特定层数的样品。本文综述了基于不同刻蚀原理的MoS₂薄膜刻蚀技术的国内外研究进展，分析讨论了不同刻蚀技术对刻蚀后MoS₂薄膜质量的影响，介绍了MoS₂刻蚀方法在场效应晶体管（FET）以及其他光电器件领域的实际应用和发展前景，最后对将来研究中需要着力解决的问题进行了展望。

Abstract

Transition metal dichalcogenides (TMDCs) have been widely concerned due to dependence of its energy band on the number of layers. Especially the two-dimensional molybdenum disulfide (MoS₂) film has become a research hot spot because of its excellent photoelectric properties. So far, chemical vapor deposition (CVD) and exfoliation have become the main methods for preparing MoS₂ films, but it is very difficult to precisely control the layers of MoS₂ using these methods. Research confirms that the MoS₂ films can be further processed by etching methods so as to obtain the sample with a monolayer or a specific number of layers. Therefore, in this paper the research progress about etching technology of MoS₂ films based on different etching mechanisms is reviewed and the influence of different etching techniques on the quality of etched films is analyzed. Moreover, the application and prospects of these etching methods in field effect transistor(FET) and other optoelectronic devices are also introduced. Finally, problems that need to be solved in the future study are prospected.
Contents
1 Introduction
2 Physical properties of molybdenum disulfide films
2.1 Crystal structure and band structure
2.2 Optical properties
3 Etching methods of molybdenum disulfide films
3.1 Plasma etching
3.2 Laser etching
3.3 Oxygen/air etching
3.4 Other chemical etching methods
4 Application of etching methods in optoelectronic devices
4.1 Field effect transistor
4.2 Other optoelectronic devices
5 Conclusion and outlook

Graphical abstract

关键词

二硫化钼 / 刻蚀 / 单层 / 场效应晶体管 / 光电器件

Key words

molybdenum disulfide / etching / monolayer / field effect transistor (FET) / optoelectronic devices

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奚清扬, 刘劲松, 李子全, 朱孔军, 台国安, 宋若谷. 二硫化钼薄膜的刻蚀方法及其应用[J]. 化学进展, 2018, 30(6): 847-863 DOI:10.7536/PC170925

Qingyang Xi, Jinsong Liu, Ziquan Li, Kongjun Zhu, Guoan Tai, Ruogu Song. Etching Methods and Application of Molybdenum Disulfide Film[J]. Progress in Chemistry, 2018, 30(6): 847-863 DOI:10.7536/PC170925

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