Quantum dot-sensitized solar cells (QD-SSCs) based on quantum confinement effect have the potential to increase the maximum attainable theoretical conversion efficiency of solar photon up to 44% and have been recongnized as the most potential solar cells. However, this kind of solar cells have shown relatively lower efficiencies than initially expected because of many difficulties in finding appropriate sensitizer materials, hole transport materials (HTM) and electrocatalytic materials. This paper mainly gives an overview of the recent developments in QD-SSCs, including the advanced materials and structure designs of wide-bandgap oxide semiconductors, quantum dot materials, electrolyte system and counter electrodes. In addition, recent experimental methods for growing quantum dots on the surface of wide-bandgap oxide semiconductor are briefly reviewed, such as CBD and SILAR method. Furthermore, the current problems existed in solving stability issues are discussed and many methods for further improving cell stability and performance are also overviewed, including the principle and technology of co-sensitization.Meanwhile, the concept of surface passivation is also discussed. Finally, We also analyse the key factors that influence to a great extent the conversion efficiency. Since to further increase the power conversion efficiency still remains a major challenge and a tough task, we propose some suggestions towards the future developments of QD-SSCs. Contents
1 Introduction
2 Structure and principle of the quantum dot-sensitized solar cells (QD-SSCs)
3 Materials of QD-SSCs
[JP3]3.1 Wide-bandgap oxide semiconductor nano-materials[JP]
3.2 Quantum dot sensitizer materials
3.3 Electrolytes
3.4 Counter electrodes
4 Preparation and assembly methods of quantum dots
4.1 Pre-synthesization method
4.2 In-situ method
5 Increasing the efficiency of QD-SSCs
6 Outlook