Organic semiconductors, as the key component of organic feld-effect transistors (OFETs), determine the performance and stability of OFET devices directly. However, the overall development of n-type and ambipolar organic semiconductors still lags behind their p-type counterparts in terms of mobility, ambient stability, and so on. Thus, the design and synthesis of n-type and ambipolar organic semiconductors have become the focus of academic research for high-performance OFETs. In this review, high performance n-type and ambipolar small organic semiconductors are highlighted and their structure-property relationship is analyzed, which is aimed to provide some meaningful guidelines for designing high-performance n-type and ambipolar organic semiconductors.
Contents
1 Introduction
2 n-type small organic semiconductors
2.1 NDI and PDI-based small organic semiconductors
2.2 DPP-based small organic semiconductors
2.3 Small organic semiconductors containing thiophene or thiazole
2.4 Acene-based small organic semiconductors
3 Ambipolar small organic semiconductors
4 The principles for the design of high performance n-type and ambipolar small molecules
4.1 Molecular structure
4.2 HOMO and LUMO energy levels
4.3 Molecular arrangement
4.4 The introduction of substituent group
4.5 Other factors
5 Conclusion