Due to high radiation resistance, good temperature characteristics and stability at high temperature, photoelectrodes integrated by Ⅲ-Ⅴ semiconductor materials, such as GaAs, GaP and InP, show higher solar absorption efficiency and photoelectric conversion efficiency compared with photoelectrodes constructed from other materials. However, the physical and chemical properties of most Ⅲ-Ⅴ semiconductors in aqueous electrolytes are very unstable, resulting in a rapid degradation of solar-driven water splitting performance. The recent progress of protective layer films research in improving the electrochemical stability of Ⅲ-Ⅴ semiconductor photoelectrodes are reviewed. In order to obtain a stable and efficient photoelectric reaction interface and the water splitting efficiency, the reasons of material attenuation and corresponding improvement methods have been highlighted. In addition, the future development of thin-layer protection strategies to obtain more efficient solar-driven water splitting devices based on Ⅲ-Ⅴ semiconductors have been prospected.