Compared with 3D perovskites, 2D RP-phase perovskites show great advantages in stability, because the long alkyl chain organic cations in RP perovskites are more hydrophobic than the short chain MA cations commonly used in 3D perovskites. However, the charge is mainly transferred in the Pb-I inorganic layer, and the long organic cation also hinders the charge transfer, increasing the band gap and exciton binding energy, which are unfavorable for the charge collection efficiency. Moreover, the introduction of bisammonium-based cations into 3D perovskites resulted in the formation of a series of DJ phase perovskites, which exhibited better stability compared with RP perovskites due to the elimination of weak van der Waals interactions and the strengthening of two-dimensional framework structure by hydrogen bonds. However, the PCE of perovskite photovoltaic devices is still poor due to the low dissociation degree of photogenerated carriers in the DJ structure. In order to solve these problems, partial replacement of long-chain organic cations with smaller volume of cations can shorten the distance between inorganic layers, which can improve the dissociation degree of photogenerated carriers in perovskite and theoretically achieve excellent device performance with good stability. Therefore, in addition to the RP and DJ two-dimensional perovskite structures described above, the structural characteristics of RP and DJ perovskites can also be combined to form ACI (Alternating Cations in the Interlayer Space) type 2D layered perovskites with Alternating cation structures by inserting two different Cations between the inorganic layers. In 2017, Kanatzidis et al. First created a new 2D halide perovskite with a molecular formula of (C(NH
2)
3)(CH
3NH
3)
nPb
nI
3n+1 by using guanidinium cation as a spacer, adding a new member to the 2D perovskite family
[64]. It is characterized by the inclusion of alternating cations in the inorganic interlayer (Figure 13 a), and the structure is also known as ACI two-dimensional perovskite. When n = 1,2,3, the crystals of GA(MA)
nPb
n are red, deep red and black, and their optical band gaps are 2. 27 eV, 1.99 eV and 1. 73 eV, respectively. Compared with typical RP perovskites, these materials have narrower band gaps, and their optical gaps show obvious red shifts of 80, 90 and 230 meV, respectively, in the corresponding n = 1 ~ 3 range. The band gap reduction of ACI perovskite is attributed to its distorted crystal structure by analysis. This trend is successfully confirmed by theoretical calculation. The change of dielectric constant in quantum wells with different structures is analyzed, and the exciton binding energy is calculated to be very small, which is more conducive to charge transport. The maximum PCE = 7.26% and the optimal FF ~ 80% were obtained by using GAMA
3Pb
3I
10 perovskite with the smallest band gap to make planar structure devices. Perovskites with two different alternating cations between layers continue to be the focus of attention due to their unprecedented special structure, and the crystallization process of materials deserves further study and analysis. In 2019, aiming at the film formation kinetics of ACI-type 2D perovskite, Zhang et al. Systematically studied the dynamic transformation of the film during the formation process and how to control the morphology and various n-phase distributions of 2D perovskite
[65]. Antisolvent engineering and hot casting technology were used to control the transition from disordered colloid to ordered crystal phase in the precursor solution based on ACI perovskite (GA)(MA)
nPb
nI
3n+1(n=3) materials, and how the kinetic transition process affected the film quality and photovoltaic performance was studied. The complex film formation process was revealed by GIWAX in situ, from the disordered colloid to the intermediate phase, and finally to the 2D ACI perovskite. During the thermal annealing process, part of the GA
2PbI
4 intermediate phase disintegrated to form a mixture of one-dimensional GAPbI
3 and ACI perovskite (Figure 13b). The formation of the intermediate phase was affected by the complex interaction between lead halide, organic cations and solvent. The formation of various n-phases is controlled and the photoelectric properties are changed by adjusting the intermediate phase. The distribution and internal charge transfer of different n phases were studied by transient absorption spectroscopy (TA). The effects of film formation kinetics on the morphology and optoelectronic properties of the films were further studied. A high PCE of 14.7% was finally achieved for photovoltaic devices based on high-quality ACI perovskite thin films, emphasizing the importance of the regulation of intermediate phases for high-quality thin films and high-performance photovoltaic devices. Subsequently, Gu et al. Demonstrated a nanoscale hybrid multidimensional ACI perovskite structure with preferred crystal orientation grown along the [Pb
n ] inorganic layer and perpendicular to the substrate based on multidimensional (GA)(MA)
3Pb
3I
10 perovskite material analysis
[66]. High-resolution scanning transmission electron microscopy (STEM) shows that in each microcrystalline region, the low-dimensional ACI structure crystallizes in a 3D perovskite nanoscale network. This nanoscale heterojunction facilitates an ultrafast (~ 0.3 ps) carrier fast energy transfer process from the ACI to the 3D perovskite and subsequent efficient carrier extraction from the 3D mesh to the transport layer (Figure 13C), optimizing the charge transport channel. Planar PSCs with high PCE (16.65%) and high stability (80% initial efficiency maintained after 2400 H in the glove box without encapsulation) were achieved based on the optimized ACI film. These results provide new insights into the crystal growth and carrier dynamics of 2D ACI. In the same year, Li et al., in order to improve the absorption capacity and carrier dissociation efficiency of the photoactive layer, reported an interlayer space alternating cation structure (B ∥ ACI) perovskite containing both double ammonium (BEA
2+) and single ammonium (MA
+) structures, with the expression of (BEA)
0.5MA
nPb
n [67]. Unlike traditional ACI perovskites, B ACI perovskites have hydrogen bonds (between the BEA and the inorganic layer), resulting in a more stable layered perovskite structure. In addition, B ACI perovskite uses fewer long-chain organic ligands, which can significantly improve the carrier transport properties compared with DJ perovskite. Therefore, in theory, B ACI perovskite has the advantages of both ACI and DJ perovskite. Compared with the typical RP perovskite, the B/ACI perovskite has a wide absorption range, which is characterized by ultraviolet photoelectron spectroscopy (UPS) and ultraviolet-visible absorption spectroscopy. Density functional theory (DFT) calculations show that (BEA)
0.5MA
3Pb
3I
10 is a direct gap semiconductor with a lower exciton binding energy compared to (BA)
2MA
2Pb
3I
10. At the same time, the ultrafast transient absorption (TA) also proves that the B ACI perovskite structure forms a narrow quantum well width distribution, resulting in an efficient carrier transport path. As a result, the barrier for charge transport is effectively lowered, enhancing the diffusion length of carriers (electrons and holes) over 350 nm and lifting the carrier mobility. Finally, the efficiency of the device based on the (BEA)
0.5Cs
0.15(FA
0.83MA
0.17)
2.85Pb
3(I
0.83Br
0.17)
10structure reached 17.39% (Fig. 13d). In addition, the tri-cation B ACI device can maintain more than 90% of its initial efficiency when stored for 2400 H under ambient atmospheric conditions, and does not show significant degradation under continuous illumination for more than 500 H. The above results indicate that ACI-type perovskite is a promising potential star semiconductor material structure for improving the performance and stability of low-dimensional perovskite devices.